{"number":"US12697658B2","kindCode":"B2","documentType":"grant","title":{"original":"Tungsten-boron sputter targets and films made thereby","english":"Tungsten-boron sputter targets and films made thereby"},"abstract":{"original":"A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less.…","english":"A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less.…"},"applicants":["TOSOH SMD, INC."],"inventors":["Eugene Y. IVANOV","Eduardo del RIO"],"filingDate":"2018-11-30","publicationDate":"2026-08-04","grantDate":"2026-08-04","verifiedWithOffice":true,"pdfUrl":"https://downloadpatent.com/pdf/US12697658B2.pdf","pages":{"en":"https://downloadpatent.com/patent/US12697658B2","zh-Hant":"https://downloadpatent.com/zh-Hant/patent/US12697658B2","ja":"https://downloadpatent.com/ja/patent/US12697658B2"}}