美國
US 12,697,658 B2
Tungsten-boron sputter targets and films made thereby
US 12,697,658 B2 是美國專利商標局（USPTO）的核准專利，日期 2026-08-04。申請人：TOSOH SMD, INC.。PDF 可在本頁下載，未登入每天最多 5 篇。
- 申請人
- TOSOH SMD, INC.
- 發明人
- Eugene Y. IVANOV; Eduardo del RIO
- 公開日
- 2026-08-04
- 申請日
- 2018-11-30
- 文件種類
- B2 核准公告
- 也寫作
- US 12,697,658 B2 · US12697658 · 12697658
摘要
A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less.…
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專利局網站： 美國專利商標局（USPTO）