United States
US 12,697,658 B2
Tungsten-boron sputter targets and films made thereby
US 12,697,658 B2 is a granted patent from the United States Patent and Trademark Office (USPTO), dated 2026-08-04. Applicant: TOSOH SMD, INC. Its PDF downloads from this page without an account, up to 5 a day.
- Applicant
- TOSOH SMD, INC.
- Inventors
- Eugene Y. IVANOV; Eduardo del RIO
- Publication date
- 2026-08-04
- Filing date
- 2018-11-30
- Document type
- B2 Granted patent
- Also written as
- US 12,697,658 B2 · US12697658 · 12697658
Abstract
A Me-B based alloy spherical powder for use in a sputtering target including a metal powder selected from the group consisting of: Mo, W, Ta, Nb, Hf and Ti; a BN powder; and optionally a binary or ternary compound powder, as well as W/B sputter targets, alloys, and barrier/seed films made by such targets. A combined diffusion barrier layer is provided by sputter coating of a W/B sputter target either directly or by reactive sputtering with nitrogen wherein the B content of the alloy is about 0.5 wt %-10 wt %. The oxygen content of the alloy target is about 50 ppm or less.…
The opening of the abstract. The full text is in the PDF.
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Patent office website: United States Patent and Trademark Office (USPTO)
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